The PSC technology exploits the following factors for enhancing photo voltaic conversion efficiency:
- Maximize solar absorption at the band gap of a solar cell by photon conditioning
- Increase density of photons by increasing their concentration at the optimum wavelength
- Increase mobility of electrons by widening the band gap by inducing stress
The proprietary patent-pending methodology developed by Dr. Nish Sonwalkar (Sc.D, MIT) based on years of research and development has demonstrated that these three factors can be combined with an existing Si solar panel to greatly improve its efficiency.
Figure 2 (below): Indicated enhancement of Poly Si solar cell IV and Power curve from 9% to 21% as a result of the PSC process.
In Figure 3 (below), the increase in efficiency of the poly Si solar cells is further enhanced by increasing the intensity of solar radiation (high density photons).
Some of the use-cases for the PSC panels are shown in Figure 4: